Method of fabricating a semiconductor package

ABSTRACT

A semiconductor package includes a redistribution layer having a first surface and a second surface opposite to each other, the redistribution layer including a plurality of first redistribution pads on the first surface, a semiconductor chip on the second surface of the redistribution layer, an active surface of the semiconductor chip facing the redistribution layer, a plurality of conductive structures on the second surface of the redistribution layer, the plurality of conductive structures being spaced apart from the semiconductor chip, and a plurality of external connection terminals on and coupled to the conductive structures, the plurality of first redistribution pads have a pitch smaller than a pitch of the plurality of external connection terminals.

CROSS-REFERENCE TO RELATED APPLICATION

This is a continuation of U.S. patent application Ser. No. 16/161,460filed Oct. 16, 2018, which is incorporated by reference herein in itsentirety.

Korean Patent Application No. 10-2018-0014810, filed on Feb. 6, 2018, inthe Korean Intellectual Property Office, and entitled: “SemiconductorPackage and Method of Fabricating the Same,” is incorporated byreference herein in its entirety.

BACKGROUND 1. Field

Embodiments relate to a semiconductor package, and more particularly, toa semiconductor package including a redistribution layer, and a methodof fabricating the same.

2. Description of the Related Art

A semiconductor package is provided to implement an integrated circuitchip to qualify for use in electronic products. Typically, asemiconductor package is configured such that a semiconductor chip ismounted on a printed circuit board (PCB) and bonding wires or bumps areused to electrically connect the semiconductor chip to the printedcircuit board. With the development of electronic industry, there is agrowing interest in standardization and miniaturization of semiconductorpackages. In addition, various studies are underway to improvecompatibility and increase operating speeds of semiconductor packages.

SUMMARY

According to exemplary embodiments, a semiconductor package may includea redistribution layer having a plurality of first redistribution padson a first surface of the redistribution layer, a semiconductor chip ona second surface of the redistribution layer, a plurality of conductivestructures provided on the second surface of the redistribution layerand spaced apart from the semiconductor chip, and a plurality ofexternal connection terminals on and coupled to the conductivestructures. An active surface of the semiconductor chip may face theredistribution layer. The first redistribution pads may have a pitchless than a pitch of the external connection terminals.

According to exemplary embodiments, a semiconductor package may includea redistribution layer having a first surface and a second surfacestanding opposite to each other, a semiconductor chip on the secondsurface of the redistribution layer, a plurality of conductivestructures on the second surface of the redistribution layer and spacedapart from the semiconductor chip, and a first semiconductor device on afirst surface of the semiconductor chip. The semiconductor chip mayinclude a chip pad facing the redistribution layer. The firstsemiconductor device may include a connection pad facing theredistribution layer.

According to exemplary embodiments, a method of fabricating asemiconductor package may include providing a preliminary package havinga semiconductor chip, a plurality of conductive structures, and amolding pattern, a plurality of chip pads the first semiconductor chipbeing exposed on a surface of the preliminary package, the conductivestructures being spaced apart from the semiconductor chip, forming aredistribution layer on the surface of the preliminary package, andforming a plurality of external connection terminals on other surface ofthe preliminary package, the plurality of external connection terminalscoupled to the conductive structures. The redistribution layer mayinclude a redistribution pattern coupled to the chip pads and aplurality of first redistribution pads coupled to the redistributionpattern. The first redistribution pads may have a pitch less than apitch of the external connection terminals.

According to exemplary embodiments, a method of fabricating asemiconductor package may include forming a redistribution layer havinga plurality of first redistribution pads on a first surface of theredistribution layer, mounting a semiconductor chip on a second surfaceof the redistribution layer and electrically connecting thesemiconductor chip to the redistribution layer, forming a plurality ofconductive structures on the second surface of the redistribution layerand electrically connecting the conductive structures to theredistribution layer, and forming a plurality of external connectionterminals on the conductive structures. The external connectionterminals may have a pitch greater than a pitch of the firstredistribution pads.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawings,in which:

FIG. 1A illustrates a plan view of an interconnect package according toexemplary embodiments.

FIG. 1B illustrates a plan view of external connection terminals of aredistribution layer according to exemplary embodiments.

FIGS. 2A, 2C, 2D, 2E, and 2F illustrate cross-sectional views of stagesin a method of fabricating an interconnect package according toexemplary embodiments.

FIG. 2B illustrates an enlarged cross-sectional view of section III ofFIG. 2A.

FIG. 3A illustrates a plan view of a semiconductor package according toexemplary embodiments.

FIG. 3B illustrates a cross-sectional view along line I-II of FIG. 3A.

FIG. 4 illustrates a cross-sectional view of a package module accordingto exemplary embodiments.

FIGS. 5A to 5C illustrate cross-sectional views of stages in a method offabricating an interconnect package according to exemplary embodiments.

FIG. 6 illustrates a cross-sectional view of an interconnect packageaccording to exemplary embodiments.

FIG. 7A illustrates a plan view of a wiring substrate according toexemplary embodiments.

FIG. 7B illustrates a cross-sectional view along line I-II of FIG. 7A orFIG. 1A.

FIGS. 8A to 8D illustrate cross-sectional views of stages in a method offabricating an interconnect package according to exemplary embodiments.

FIGS. 9A to 9C illustrate cross-sectional views of stages in a method offabricating an interconnect package according to exemplary embodiments.

DETAILED DESCRIPTION

Like reference numerals indicate like components throughout thedescription. A semiconductor package and a method of fabricating thesame according to exemplary embodiments will be described hereinafter.

FIG. 1A illustrates a plan view showing an interconnect packageaccording to exemplary embodiments. FIG. 1B illustrates a plan view ofexternal connection terminals of a redistribution layer on a bottomsurface of the interconnect package. FIGS. 2A, 2C, 2D, 2E, and 2Fillustrate cross-sectional views along line I-II′ of FIG. 1A, showingstages in a method of fabricating the interconnect package, with FIG. 2Billustrating an enlarged cross-sectional view showing section III ofFIG. 2A. In the following description, for consistency of discussion,FIG. 2E is chosen to define a top surface, an upper portion, a bottomsurface, and a lower portion.

Referring to FIGS. 2A and 2B, a preliminary package 999 may be formed ona first carrier substrate 910. The preliminary package 999 may include asemiconductor chip 100, a wiring substrate 200, and a molding pattern300. In some embodiments, the first carrier substrate 910 may beprepared. A carrier adhesive layer may further be provided on the firstcarrier substrate 910.

The wiring substrate 200 may be provided on the first carrier substrate910. The wiring substrate 200 may have a hole 290 penetratingtherethrough. For example, the hole 290 may be formed in a printedcircuit board (PCB), and the PCB having the hole 290 may be used as thewiring substrate 200. When viewed in plan view, the hole 290 may beformed on a central portion of the wiring substrate 200. The hole 290may expose the first carrier substrate 910.

The wiring substrate 200 may include a base layer 210 and conductivestructures 250 through the base layer 210. The base layer 210 mayinclude a plurality of stacked base layers 210. The base layers 210 mayinclude a non-conductive material. For example, the base layers 210 mayinclude a ceramic, a silicon-based material, or a polymer. The hole 290may penetrate through the base layers 210. The conductive structures 250may be provided in the base layers 210, e.g., in regions of the baselayers 210 along a perimeter of the hole 290. For example, asillustrated in FIG. 2A, the wiring substrate 200 may include a pluralityof stacked base layers 210 on the first carrier substrate 910, with thehole 290 penetrating through the stacked base layers 210 to expose thefirst carrier substrate 910, and the conductive structures 250 being inthe base layers 210 and peripheral to the hole 290.

As illustrated in FIG. 2B, each of the conductive structures 250 mayinclude a first pad 251, a conductive pattern 252, vias 253, and asecond pad 254. The first pad 251 may be provided on a first surface 200a of the wiring substrate 200. The conductive pattern 252 may beinterposed between the base layers 210, e.g., one conductive pattern 252may be interposed between two stacked base layers 210. The vias 253 maypenetrate the base layers 210 and may be coupled to the conductivepattern 252, e.g., each via 253 may penetrate one base layer 210 and becoupled to the conductive pattern 252. The second pad 254 may bedisposed on a second surface 200 b of the wiring substrate 200 andcoupled to at least one of the vias 253. The second surface 200 b of thewiring substrate 200 may be opposite to the surface 200 a of the wiringsubstrate 200. The second pad 254 may be electrically connected to thefirst pad 251 through the vias 253 and the conductive pattern 252. Thesecond pad 254 and the first pad 251 may not be aligned with each otheralong a second direction D2, e.g., the second pad 254 and the first pad251 may be horizontally offset from each other along a first directionD1. The second pad 254 and the first pad 251 may be different in number,pitch, and/or arrangement.

In this description, the first direction D1 refers to a directionparallel to a surface 100 a of the semiconductor chip 100 (FIG. 2A), andthe second and third directions D2 and D3 refer to directionsperpendicular to the surface 100 a of the semiconductor chip 100. Thethird direction D3 is opposite to the second direction D2.

As illustrated in FIG. 2A, the semiconductor chip 100 may be provided onthe first carrier substrate 910. The semiconductor chip 100 may beprovided in the hole 290 of the wiring substrate 200, e.g., to besurrounded by the base layers 210 with the conductive structures 250.The surface 100 a of the semiconductor chip 100 may be an activesurface.

The semiconductor chip 100 may have chip pads 105 on the surface 100 athereof. The chip pads 105 may include metal, e.g., aluminum or copper.The semiconductor chip 100 may be disposed on the first carriersubstrate 910 in such a way that the chip pads 105 may face, e.g., andcontact, the first carrier substrate 910. The semiconductor chip 100 maybe a programmable chip. The semiconductor chip 100 may includeintegrated circuits therein, e.g., the integrated circuit may includelogic circuits. For example, the semiconductor chip 100 may include afield-programmable gate array (FPGA) or an application processor. Thesemiconductor chip 100 may be provided on the first carrier substrate910 before or after the wiring substrate 200 is disposed.

The molding pattern 300 may be formed on the semiconductor chip 100 andthe wiring substrate 200. The molding pattern 300 may fill a gap betweenthe semiconductor chip 100 and the wiring substrate 200. The moldingpattern 300 may include an insulating polymer, e.g., an epoxy-basedpolymer. For example, the molding pattern 300 may include an adhesiveinsulation film, e.g., Ajinomoto build-up film (ABF)®. An adhesiveinsulation film may be attached onto the wiring substrate 200 and thesemiconductor chip 100 to form the molding pattern 300.

Referring to FIG. 2C, a second carrier substrate 920 may be provided onthe molding pattern 300. For example, a removable metal foil may be usedas the second carrier substrate 920.

Referring sequentially to FIGS. 2C and 2D, the structure of FIG. 2C maybe flipped, e.g., turned upside-down, and the first carrier substrate910 may be removed to expose the surface 100 a of the semiconductor chip100 and the first surface 200 a of the wiring substrate 200. Thepreliminary package 999 may be turned upside down in such a way that thesurface 100 a of the semiconductor chip 100 may face upward, and thesecond carrier substrate 920 may define a bottom of the structure inFIG. 2D.

Referring to FIGS. 1A, 1B, and 2E, a redistribution layer 400 may beformed on a top surface of the preliminary package 999. For example, theredistribution layer 400 may be formed, e.g., directly, on the surface100 a of the semiconductor chip 100 and the first surface 200 a of thewiring substrate 200. The redistribution layer 400 may include at leastone insulation pattern 410 with redistribution patterns 415 therein.

In detail, referring to FIG. 2E, the at least one insulation pattern 410may be formed, e.g., directly, on the top surface of the preliminarypackage 999, covering the semiconductor chip 100 and the wiringsubstrate 200. The insulation pattern 410 may include a photosensitivepolymer. The photosensitive polymer may include, e.g., one or more ofphotosensitive polyimide (PSPI), polybenzoxazole (PBO), phenolicpolymer, and benzocyclobutene (BCB) polymer. The formation of theinsulation pattern 410 may include coating a polymer to form a polymerlayer and patterning the polymer layer. The patterning of the polymerlayer may include performing exposure and development processes. Theinsulation pattern 410 may have openings 410 a therethrough that exposethe chip pads 105 and the conductive structures 250.

The redistribution patterns 415 may be formed on the insulation pattern410, e.g., in the openings 410 a through the insulation pattern 410 andon a top surface 410 b thereof. In some embodiments, a seed layer may beformed on the insulation pattern 410. An electroplating process may beperformed using the seed layer as an electrode, and as a result, aconductive layer may be formed. The conductive layer may include metal,e.g., copper. The seed layer and the conductive layer may be patternedto form the redistribution patterns 415. The redistribution patterns 415may include via portions 415 a provided in the openings 410 a of theinsulation pattern 410 and line portions 415 b disposed on the topsurface 410 b of the insulation pattern 410. For example, as illustratedin FIG. 2E, the via portions 415 a of the redistribution patterns 415may fill the openings 410 a of the insulation pattern 410 to contactrespective ones of the chip pads 105 and the conductive structures 250,and the line portions 415 b of the redistribution patterns 415 mayextend from respective ones of the via portions 415 a, e.g., in a linearform, along the top surface 410 b of the insulation pattern 410.

As illustrated in FIG. 2E, the formation of the insulation pattern 410and the formation of the redistribution patterns 415 may be repeatedlyperformed, e.g., three insulation patterns 410 may be stacked on top ofeach other with redistribution patterns 415 penetrating each of theinsulation patterns 410. The redistribution patterns 415 may beelectrically connected to the chip pads 105 and the conductivestructures 250.

Referring to FIGS. 1A and 2E, first redistribution pads 451, secondredistribution pads 452, and third redistribution pads 453 may beprovided on an uppermost one of the insulation patterns 410. Theredistribution pads 451, 452, and 453 may be coupled to theredistribution patterns 415 in underlying insulation patterns 410. Theredistribution layer 400 may therefore be fabricated. The redistributionlayer 400 may include a plurality of the insulation patterns 410, theredistribution patterns 415 inside and between the insulation patterns410, and the redistribution pads 451, 452, and 453 on the uppermost oneof the insulation patterns 410. The numbers of the insulation patterns410 and the redistribution patterns 415 are not limited to that shown,and may be variously changed. For example, the redistribution layer 400may include a single redistribution pattern 415.

The redistribution layer 400 may be provided on the semiconductor chip100 and the wiring substrate 200. As illustrated in FIG. 1A, theredistribution layer 400 may have a width greater than that of thesemiconductor chip 100 along a fourth direction D4. As furtherillustrated in FIG. 1A, the redistribution layer 400 may have a lengthgreater than that of the semiconductor chip 100 along the firstdirection D1. The redistribution layer 400 may have a relatively smallthickness along the second direction D2 (FIG. 2E). For example, theredistribution layer 400 may be thinner than the wiring substrate 200along the second direction D2.

As illustrated in FIG. 2E, the redistribution layer 400 may have a firstsurface 400 a and a second surface 400 b opposite to each other. Thesecond surface 400 b of the redistribution layer 400 may face, e.g., bedirectly on, the semiconductor chip 100. When viewed in a plan view, asillustrated in FIG. 1A, the redistribution layer 400 may have a firstregion R1, a second region R2, and a third region R3. For example, asillustrated in FIG. 1A, the first region R1 may refer to a region of theredistribution layer 400 including the first redistribution pads 451above the wiring substrate 200 (e.g., left of the semiconductor chip100), the second region R2 may refer to a region of the redistributionlayer 400 including the second redistribution pads 452 above thesemiconductor chip 100, and the third region R3 may refer to a region ofthe redistribution layer 400 including the third redistribution pads 453above the wiring substrate 200 (e.g., right of the semiconductor chip100). The following describes in detail the redistribution pads 451,452, and 453.

Referring to FIGS. 1A and 2E, the first redistribution pads 451 may beprovided on the first surface 400 a of the first region R1 of theredistribution layer 400. Since the redistribution layer 400 is providedon the wiring substrate 200, the first redistribution pads 451 may bevariously arranged, e.g., the first redistribution pads 451 may bearranged in a matric pattern along a side of the semiconductor chip 100(FIG. 1A). For example, when viewed in a plan view, as illustrated inFIG. 1A, at least one of the first redistribution pads 451 may be spacedapart from the semiconductor chip 100, e.g., a rightmost column of thefirst redistribution pads 451 may be arranged along and spaced apartalong the first direction D1 from a side of the semiconductor chip 100(FIG. 1A). For example, as illustrated in FIG. 2E, some of the firstredistribution pads 451, e.g., first and second right columns of thefirst redistribution pads 451 in FIG. 1A, may be coupled through theredistribution patterns 415 to the chip pads 105 of the semiconductorchip 100, and some of the first redistribution pads 451, e.g., aleftmost column of the first redistribution pads 451 in FIG. 1A, may becoupled through the redistribution patterns 415 to the conductivestructures 250.

The first redistribution pads 451 may be arranged at a first pitch P1along the first direction D1 and the fourth direction D4. For example,the first pitch P1 may fall within a range from about 50 μm to about 200μm. However, the first pitch P1 is not limited to the above range, andmay be variously changed.

The second redistribution pads 452 may be provided on the first surface400 a of the second region R2 of the redistribution layer 400. Thesecond redistribution pads 452 may be coupled through the redistributionpatterns 415 to the chip pads 105. However, embodiments are not limitedthereto, e.g., some of the second redistribution pads 452 may be coupledthrough the redistribution patterns 415 to the conductive structures250. The second redistribution pads 452 may be arranged at a secondpitch P2, e.g., along the first direction D1 and the fourth directionD4. For example, the second pitch P2 may be greater than the first pitchP1.

The third redistribution pads 453 may be provided on the first surface400 a of the third region R3 of the redistribution layer 400. Whenviewed in a plan view, as illustrated in FIG. 1A, at least one of thethird redistribution pads 453 may be spaced apart from the semiconductorchip 100, e.g., the first and second right columns of the thirdredistribution pads 453 may be spaced apart from the semiconductor chip100 along the first direction D1 (FIG. 1A). For example, as furtherillustrated in FIG. 1A, a leftmost column of the third redistributionpads 453 may be above the semiconductor chip 100 to overlap an edge ofthe semiconductor chip 100. As illustrated in FIG. 2F, some of the thirdredistribution pads 453 may be coupled to the chip pads 105, e.g., theleftmost column of the third redistribution pads 453 in FIG. 1A, andsome of the third redistribution pads 453 may be coupled to theconductive structures 250, e.g., the rightmost column of the thirdredistribution pads 453 in FIG. 1A.

The third redistribution pads 453 may be arranged at a third pitch P3,e.g., along the first direction D1 and the fourth direction D4. Thethird pitch P3 may be different from the first and second pitches P1 andP2. For example, the third pitch P3 may be greater than each of thefirst and second pitches P1 and P2. However, magnitude relation betweenthe first to third pitches P1, P2, and P3 is not limited to thementioned above, and may be variously changed.

Referring to FIGS. 2E and 2F, the second carrier substrate 920 may beremoved from the molding pattern 300 to expose a bottom surface (e.g.,of the molding pattern 300) of the preliminary package 999.

Referring to FIGS. 1A, 1B, and 2F, external connection terminals 500 maybe provided on the bottom surface of the preliminary package 999, i.e.,on the molding pattern 300, to be coupled to the conductive structures250. The external connection terminals 500 may be provided on the secondsurface 200 b of the wiring substrate 200. For example, openings may beformed in the molding pattern 300, exposing the conductive structures250, i.e., exposing the second pads 254 of the conductive structures250. The external connection terminals 500 may be formed in the openingsof the molding pattern 300, thereby being coupled to the second pads 254of the conductive structures 250. For example, as illustrated in FIG.1B, the external connection terminals 500 may be formed around aperimeter of the hole 290, which in turn, may surround the semiconductorchip 100.

Referring to FIGS. 1B and 2F, the external connection terminals 500 maybe arranged at a fourth pitch P4, e.g., along the first and fourthdirections D1 and D4. The fourth pitch P4 may be identical or similar toa pitch of the second pads 254. The fourth pitch P4 may be determined bya pitch of terminals to which the external connection terminals 500 areelectrically connected. The fourth pitch P4 may be greater than aminimum pitch of the redistribution pads 451, 452, and 453. For example,the fourth pitch P4 may be greater than the minimum of the first tothird pitches P1, P2, and P3. The fourth pitch P4 may be, e.g., greaterthan the first pitch P1. The fourth pitch P4 may fall within a rangefrom about 200 μm to about 800 μm. The external connection terminals 500may include a conductive material, e.g., tin (Sn), lead (Pb), indium(In), or an alloy thereof. An interconnect package 1000 may therefore beformed. The interconnect package 1000 may be fabricated as a fan-outpanel level package. The redistribution layer 400 may have a relativelysmall thickness, and thus the interconnect package 1000 may becomecompact-sized.

FIG. 3A illustrates a plan view showing a semiconductor packageaccording to exemplary embodiments. FIG. 3B illustrates across-sectional view corresponding to line I-II of FIG. 3A. Adescription duplicate with the aforementioned will be omittedhereinafter. The following also references FIG. 1B.

Referring to FIGS. 3A and 3B, a first semiconductor device 2000, asecond semiconductor device 3000, and a third semiconductor device 4000may be mounted on the interconnect package 1000, which step mayfabricate a semiconductor package PKG. The interconnect package 1000 maybe fabricated as discussed above with reference to FIGS. 2A to 2F.

The first semiconductor device 2000 may be disposed on the first surface400 a of the first region R1 of the redistribution layer 400. The firstsemiconductor device 2000 may be a semiconductor chip. The firstsemiconductor device 2000 may include connection pads 2005 whose pitchand size (e.g., a planar area) are relatively small. For example, theconnection pads 2005 of the first semiconductor device 2000 may bearranged at a pitch ranging from about 50 μm to about 200 μm.

First connectors 651 may be formed between the first semiconductordevice 2000 and the redistribution layer 400, thereby coupling to theconnection pads 2005 of the first semiconductor device 2000 and also tothe first redistribution pads 451. The first connectors 651 may includesolder balls, bumps, and/or pillars. The first connectors 651 may bearranged at a pitch identical or similar to the pitch of the connectionpads 2005 of the first semiconductor device 2000 and the first pitch P1of the first redistribution pads 451. Therefore, the first pitch P1 ofthe first redistribution pads 451 may be determined by the pitch of theconnection pads 2005 of the first semiconductor device 2000. The firstsemiconductor device 2000 may be electrically connected through theredistribution layer 400 to the semiconductor chip 100 and theconductive structures 250. In this description, the phrase “electricallyconnected/coupled to the redistribution layer 400” may mean“electrically connected/coupled to the redistribution pattern(s) 415.”The phrase “electrically connected/coupled to the semiconductor chip100” may mean “electrically connected/coupled to the chip pads 105 ofthe semiconductor chip 100 and integrated circuits in the semiconductorchip 100.”

The second semiconductor device 3000 may be disposed on the firstsurface 400 a of the second region R2 of the redistribution layer 400.The second semiconductor device 3000 may be a semiconductor chip. Thesecond semiconductor device 3000 may include connection pads 3005 whosepitch and size (e.g., a planar area) are relatively small. Secondconnectors 652 may be formed between the second semiconductor device3000 and the redistribution layer 400, thereby coupling to theconnection pads 3005 of the second semiconductor device 3000 and also tothe second redistribution pads 452. The second connectors 652 mayinclude solder balls, bumps, and/or pillars. The second pitch P2 of thesecond redistribution pads 452 may be determined by a pitch of theconnection pads 3005 of the second semiconductor device 3000. The secondpitch P2 may be relatively small. For example, the second pitch P2 mayfall within a range from about 50 μm to about 200 μm. The secondsemiconductor device 3000 may be electrically connected through theredistribution layer 400 to the semiconductor chip 100 and theconductive structures 250. In addition, the second semiconductor device3000 may be electrically connected through the redistribution layer 400to the first semiconductor device 2000.

The third semiconductor device 4000 may be disposed on the first surface400 a of the third region R3 of the redistribution layer 400. The thirdsemiconductor device 4000 may be a semiconductor package. For example,the third semiconductor device 4000 may include a package substrate4100, a first semiconductor chip 4200, and a molding member 4300. Forexample, the first semiconductor chip 4200 may be disposed on thepackage substrate 4100. In another example, the first semiconductor chip4200 may be provided in plural. The molding member 4300 may disposed onthe package substrate 4100 to encapsulate the first semiconductor chip4200. The connection pads 4005 may be provided on a bottom surface ofthe package substrate 4100. The connection pads 4005 of the thirdsemiconductor device 4000 may be arranged at a relatively large pitch.

Third connectors 653 may be formed between the third semiconductordevice 4000 and the redistribution layer 400, thereby coupling to theconnection pads 4005 of the third semiconductor device 4000 and also tothe third redistribution pads 453. The third connectors 653 may includesolder balls, bumps, and/or pillars. The third connectors 653 may bearranged at a pitch substantially the same as the pitch of theconnection pads 4005 of the third semiconductor device 4000 and thethird pitch P3 of the third redistribution pads 453. The third pitch P3may be determined by the pitch of the connection pads 4005 of the thirdsemiconductor device 4000. The third semiconductor device 4000 may beelectrically connected through the redistribution layer 400 to thesemiconductor chip 100 and the conductive structures 250. In addition,the third semiconductor device 4000 may be electrically connectedthrough the redistribution layer 400 to the first semiconductor device2000 and/or the second semiconductor device 3000.

The first semiconductor device 2000 may be different from the second andthird semiconductor devices 3000 and 4000. The third semiconductordevice 4000 may be different from the second semiconductor device 3000.The phrase “the semiconductor devices 2000, 3000, and 4000 are differentfrom each other” may mean “the semiconductor devices 2000, 3000, and4000 are different in at least one of size, function, and storagecapacity.” In this description, the size of each of the semiconductordevices 2000, 3000, and 4000 may include a height, a width, and alength.

A user may have difficulty in controlling pitches and sizes of theconnection pads 2005 of the first semiconductor device 2000, theconnection pads 3005 of the second semiconductor device 3000, and theconnection pads 4005 of the third semiconductor device 4000. In someembodiments, since the first to third redistribution pads 451, 452, and453 are coupled through the redistribution layer 400 to the chip pads105 of the semiconductor chip 100 and/or to the conductive structures250, pitches and arrangements of the redistribution pads 451, 452, and453 may be freely changed without being limited by pitches andarrangements of the chip pads 105 and the conductive structures 250.Although the connection pads 2005, 3005, and 4005 of the semiconductordevices 2000, 3000, and 4000 have different pitches from each other, thepitches of the first to third redistribution pads 451, 452, and 453 maybe easily adjusted in response to the difference in pitch between theconnection pads 2005, 3005, and 4005.

The interconnect package 1000 according to some embodiments may beconfigured so that the redistribution pads 451, 452, and 453 may beformed to have respective pitches P1, P2, and P3 that are different fromeach other in accordance with the regions R1, R2, and R3 of theredistribution layer 400. The interconnect package 1000 may be used tostandardize and systematize an electrical connection between thesemiconductor chip 100 and the semiconductor devices 2000, 3000, and4000. When a user wants to electrically connect the semiconductor chip100 to a specific semiconductor device, the interconnect package 1000may be used for an electrical connection with the specific semiconductordevice. The user may mount the specific semiconductor device on itscorresponding region (e.g., one of the regions R1, R2, and R3) of theredistribution layer 400. The corresponding region may mean a regionprovided with ones of the redistribution pads 451, 452, and 453, whichones have pitch and arrangement conforming to those of connection padsof the specific semiconductor device. For example, when it is requiredan electrical connection between the first semiconductor device 2000 andthe semiconductor chip 100, the first semiconductor device 2000 may beplaced on the first region R1 of the redistribution layer 400, whichconfiguration may easily couple the first semiconductor device 2000 tothe first redistribution pads 451.

In some embodiments, the connection pads 2005, 3005, and 4005 of thesemiconductor devices 2000, 3000, and 4000 may be provided on bottomsurfaces of the semiconductor devices 2000, 3000, and 4000. The bottomsurfaces of the semiconductor devices 2000, 3000, and 4000 may face theredistribution layer 400. The chip pads 105 of the semiconductor chip100 may be provided on the surface 100 a of the semiconductor chip 100,which surface 100 a may face the redistribution layer 400. For example,the semiconductor chip 100 and the semiconductor devices 2000, 3000, and4000 may be connected in a face-to-face manner through theredistribution layer 400. An electrical path may thus be decreasedbetween the semiconductor chip 100 and the semiconductor devices 2000,3000, and 4000. The semiconductor package PKG may increase in operatingspeed.

If the redistribution layer 400 were not provided or did not extend ontothe wiring substrate 200, the semiconductor devices 2000, 3000, and 4000would have been limitedly disposed on the semiconductor chip 100, e.g.,only in regions overlapping the semiconductor chip 100. In contrast,according to embodiments, the interconnect package 1000 may include theredistribution layer 400 which extends onto the surface 200 a of thewiring substrate 200, e.g., along the first and fourth direction D1 andD4 around the entire perimeter of the semiconductor chip 100. Therefore,the semiconductor devices 2000, 3000, and 4000 may not be limitedlydisposed only on the semiconductor chip 100, but may be freely placed.

For example, when viewed in a plan view, only a portion of each of thefirst and third semiconductor devices 2000 and 4000 may overlap thesemiconductor chip 100. A planar arrangement of the semiconductordevices 2000, 3000, and 4000 may not be limited to that shown, butvariously changed. The semiconductor devices 2000, 3000, and 4000 may beelectrically connected to an external device through the redistributionlayer 400 and the conductive structures 250. The semiconductor devices2000, 3000, and 4000 may further have an electrical path connected tothe external device without through the semiconductor chip 100.Therefore, the semiconductor devices 2000, 3000, and 4000 may have anelectrical path that can be freely designed. When the electrical path isa power/ground voltage supply path, limitation of the electrical pathmay be further decreased.

The second semiconductor device 3000 may have a height greater than thatof the first semiconductor device 2000 along the second direction D2.The third semiconductor device 4000 may have a height greater than thoseof the first and second semiconductor devices 2000 and 3000 along thesecond direction D2.

The first to third semiconductor devices 2000, 3000, and 4000 mayperform different functions from one another. For example, of the firstto third semiconductor devices 2000, 3000, and 400, one may include apower management integrated circuit, another may include a radiofrequency device, and the last one may include a fingerprint sensingdevice.

The interconnect package 1000 may have good compatibility. As discussedabove, although the semiconductor devices 2000, 3000, and 4000 aredifferent in size, function, storage capacity, and pitch of theconnection pads 2005, 3005, and 4005, the interconnect package 1000 maybe coupled to the semiconductor devices 2000, 3000, and 4000.

In some embodiments, various types of semiconductor devices may be usedas the first to third semiconductor devices 2000, 3000, and 4000. Forexample, the third semiconductor device 4000 may be a semiconductorchip. In another example, at least one of the first and secondsemiconductor devices 2000 and 3000 may be a semiconductor package. Inanother example, one or more of the first to third semiconductor devices2000, 3000, and 4000 may be a package-on-package, a multichip package inwhich a plurality of chips are stacked, or a system-in-package. Theredistribution pads 451, 452, and 453 may be adjusted in pitch and type,based on kinds of the first to third semiconductor devices 2000, 3000,and 4000.

In some embodiments, a molding layer 5000 may further be formed on thefirst surface 400 a of the redistribution layer 400, covering the firstto third semiconductor devices 2000, 3000, and 4000. The molding layer5000 may include an insulating polymer, e.g., an epoxy-based moldingcompound.

FIG. 4 illustrates a cross-sectional view showing a package moduleaccording to exemplary embodiments. A description duplicate with theaforementioned will be omitted hereinafter.

Referring to FIGS. 3A and 4 , a package module 1 may include a modulesubstrate 10 and the semiconductor package PKG. A PCB may be used as themodule substrate 10. The module substrate 10 may have conductive pads 15on a top surface thereof. The conductive pads 15 may be arranged at arelatively large pitch. Therefore, it may be required that terminalscoupled to the conductive pads 15 be arranged at a relatively largepitch.

The semiconductor package PKG may be mounted on the module substrate 10.The semiconductor package PKG may be disposed on the module substrate 10in such a way that the external connection terminals 500 of thesemiconductor package PKG may be aligned with the conductive pads 15.The external connection terminals 500 may be arranged at the fourthpitch P4. The fourth pitch P4 may be substantially identical or similarto a pitch of the conductive pads 15. The external connection terminals500 may be coupled to the conductive pads 15, and thus the semiconductorpackage PKG may be electrically connected to the module substrate 10.The phrase “electrically connected to the module 10” may mean“electrically connected to electrical lines (not shown) in the modulesubstrate 10.”

FIGS. 5A to 5C illustrate cross-sectional views corresponding line I-IIof FIG. 1A, showing a method of fabricating an interconnect packageaccording to exemplary embodiments. A description duplicate with theaforementioned will be omitted hereinafter.

Referring to FIGS. 1A and 5A, the insulation patterns 410 and theredistribution patterns 415 may be formed on a third carrier substrate930, which may form a preliminary redistribution layer 401. One of theinsulation patterns 410 may cover the third carrier substrate 930. Theredistribution patterns 415 may be interposed between the insulationpatterns 410. The insulation patterns 410 and the redistributionpatterns 415 may be formed by processes substantially the same as thosediscussed above with reference to FIG. 2E. Conductive pads 416 may beformed on the preliminary redistribution layer 401 and coupled to theredistribution patterns 415.

Referring to FIGS. 1A, 1B, and 5B, the semiconductor chip 100 and thewiring substrate 200 may be disposed on the preliminary redistributionlayer 401. The semiconductor chip 100 may include the chip pads 105, andthe wiring substrate 200 may include the conductive structures 250. Thesemiconductor chip 100 may be placed on the preliminary redistributionlayer 401 in such a way that the surface 100 a of the semiconductor chip100 may face the preliminary redistribution layer 401. When viewed in aplan view, the semiconductor chip 100 may be disposed on a centralregion of the preliminary redistribution layer 401.

First conductive interposers 461 may be formed between the semiconductorchip 100 and the preliminary redistribution layer 401, thereby couplingto the chip pads 105 and the conductive pads 416. The semiconductor chip100 may thus be electrically connected to the redistribution patterns415. The first conductive interposers 461 may include solder balls,bumps, and/or pillars. A first under-fill pattern 310 may be formed in agap between the semiconductor chip 100 and the preliminaryredistribution layer 401, encapsulating the first conductive interposers461.

The wiring substrate 200 may be placed on the preliminary redistributionlayer 401 in such a way that the first surface 200 a of the wiringsubstrate 200 may face the second surface 400 b of the preliminaryredistribution layer 401. The semiconductor chip 100 may be provided inthe hole 290 of the wiring substrate 200.

Second conductive interposers 462 may be formed between the wiringsubstrate 200 and the preliminary redistribution layer 401, therebycoupling to the conductive structures 250 and the conductive pads 416.The conductive structures 250 may thus be electrically connected to theredistribution patterns 415. The second conductive interposers 462 mayinclude solder balls, bumps, and/or pillars. A second under-fill pattern320 may further be formed in a gap between the wiring substrate 200 andthe preliminary redistribution layer 401, encapsulating the secondconductive interposers 462. The first and second under-fill patterns 310and 320 may include an insulating resin (e.g., an epoxy-based resin).

The molding pattern 300 may be formed on the semiconductor chip 100 andthe wiring substrate 200. The molding pattern 300 may fill a gap betweenthe semiconductor chip 100 and the wiring substrate 200. Externalconnection terminals 500 may be formed on the second surface 200 b ofthe wiring substrate 200, thereby coupling to the conductive structures250.

Referring to FIGS. 1A, 1B, and 5C, the semiconductor chip 100, thewiring substrate 200, the molding pattern 300, and the preliminaryredistribution layer 401 may be turned upside down in such a way thatthe surface 100 a of the semiconductor chip 100 may face upward. Thethird carrier substrate 930 may be removed to expose the preliminaryredistribution layer 401.

First redistribution pads 451, second redistribution pads 452, and thirdredistribution pads 453 may be formed on the exposed preliminaryredistribution layer 401, which may finalize the redistribution layer400. The formation and arrangement of the redistribution pads 451, 452,and 453 may be substantially the same as those discussed above. Aninterconnect package 1001 may therefore be eventually fabricated.

FIG. 6 illustrates a cross-sectional view corresponding to line I-II ofFIG. 1A, showing an interconnect package according to exemplaryembodiments. A description duplicate with the aforementioned will beomitted hereinafter.

Referring to FIGS. 1A and 6 , an interconnect package 1002 may includethe semiconductor chip 100, the wiring substrate 200, the moldingpattern 300, the redistribution layer 400, and a lower redistributionlayer 700. The semiconductor chip 100, the wiring substrate 200, themolding pattern 300, and the redistribution layer 400 may be formed asdiscussed in the example of FIGS. 2A to 2F or FIGS. 5A to 5C.

The lower redistribution layer 700 may be formed on a bottom surface ofthe molding pattern 300 and bottom surfaces of the conductive structures250. In some embodiments, lower holes may be formed in the moldingpattern 300, exposing the conductive structures 250. The lower holes mayexpose, for example, the second pads 254. The lower redistribution layer700 may include lower insulation patterns 710 and lower redistributionpatterns 715. The lower insulation patterns 710 may be stacked on themolding pattern 300. Each of the lower redistribution patterns 715 mayinclude a line portion and a via portion. The line portions may beprovided on surfaces of the lower insulation patterns 710. The viaportions may penetrate the lower insulation patterns 710 or may beprovided in the lower holes in the molding pattern 300. The lowerredistribution patterns 715 may be coupled to the conductive structures250. The external connection terminals 500 may be formed on the lowerredistribution layer 700, thereby coupling to the lower redistributionpatterns 715.

The external connection terminals 500 may be arranged at a fourth pitchP4′. The fourth pitch P4′ may be different from a pitch of the secondpads 254 of the conductive structures 250. The external connectionterminals 500 may be arranged differently from the second pads 254 ofthe conductive structures 250. For example, the external connectionterminals 500 may not be aligned in the second direction D2 with thesecond pads 254 of the conductive structures 250. In some embodiments,the lower redistribution layer 700 may be provided to more freely designan arrangement of the external connection terminals 500.

FIG. 7A illustrates a plan view showing a wiring substrate according toexemplary embodiments, which plan view corresponds to that of aninterconnect package. FIG. 7B illustrates a cross-sectional viewcorresponding to that taken along line I-II of FIG. 7A or FIG. 1A. Adescription duplicate with the aforementioned will be omittedhereinafter.

Referring to FIGS. 1A, 7A, and 7B, an interconnect package 1003 mayinclude a wiring substrate 201, the semiconductor chip 100, theredistribution layer 400, the external connection terminals 500, and themolding pattern 300. As illustrated in FIG. 7A, the wiring substrate 201may have a tetragonal shape. The wiring substrate 201 may be provided inplural. When viewed in a plan view, the semiconductor chip 100 may besurrounded by the plurality of wiring substrates 201. The semiconductorchip 100 may be spaced apart from the wiring substrates 201. Each of thewiring substrate 201 may include the base layers 210 and the conductivestructures 250. The semiconductor chip 100, the redistribution layer400, the external connection terminals 500, and the molding pattern 300may be formed as discussed in the example of FIGS. 2A to 2F or FIGS. 5Ato 5C.

Alternatively, the lower redistribution layer 700 of FIG. 6 may furtherbe formed on a bottom surface of the molding pattern 300. In this case,the external connection terminals 500 may be disposed on a bottomsurface of the lower redistribution layer 700.

FIGS. 8A to 8D illustrate cross-sectional views corresponding to lineI-II of FIG. 1A, showing a method of fabricating an interconnect packageaccording to exemplary embodiments. A description duplicate with theaforementioned will be omitted hereinafter. In describing FIGS. 8A to8D, FIG. 8D is chosen to define a top surface, an upper portion, abottom surface, and a lower portion.

Referring to FIGS. 1A and 8A, a preliminary package 998 may be formed onthe first carrier substrate 910. The preliminary package 998 may includeconductive structures 250′, the semiconductor chip 100, and the moldingpattern 300. The wiring substrate 200 of FIG. 2A may not be provided.Instead of the wiring substrate 200, metal pillars may be provided onthe first carrier substrate 910 to form the conductive structures 250′.The conductive structures 250′ may include metal pillars.

The molding pattern 300 may be formed on the first carrier substrate910, covering the semiconductor chip 100. The molding pattern 300 mayfill gaps between the conductive structures 250′ and between thesemiconductor chip 100 and the conductive structures 250′. The moldingpattern 300 may expose bottom surfaces 250 b of the conductivestructures 250′. The second carrier substrate 920 may be provided on thepreliminary package 998, covering the molding pattern 300 and theconductive structures 250′.

Referring to FIGS. 1A and 8B, the preliminary package 998 and the secondcarrier substrate 920 may be turned upside down in such a way that thesurface 100 a of the semiconductor chip 100 may face upward. The firstcarrier substrate 910 may be removed to expose the surface 100 a of thesemiconductor chip 100.

Referring to FIGS. 1A and 8C, the redistribution layer 400 may be formedon an exposed top surface of the preliminary package 998. Theredistribution layer 400 may cover the surface 100 a of thesemiconductor chip 100, the conductive structures 250′, and the moldingpattern 300. The formation of the redistribution layer 400 may besubstantially the same as that discussed with reference to FIG. 2E. Theredistribution layer 400 may include insulation patterns 410,redistribution patterns 415, and first to third redistribution pads 451,452, and 453. The second carrier substrate 920 may be removed to exposethe molding pattern 300 and the bottom surfaces 250 b of the conductivestructures 250′.

Referring to FIGS. 1A and 8D, the external connection terminals 500 maybe formed on a bottom surface of the preliminary package 998, therebycoupling to the conductive structures 250′. For example, the externalconnection terminals 500 may be formed on the bottom surfaces 250 b ofthe conductive structures 250′. An interconnect package 1004 maytherefore be eventually fabricated. The interconnect package 1004 may befabricated as a fan-out panel level package.

Alternatively, the lower redistribution layer 700 of FIG. 6 may furtherbe formed on a bottom surface of the molding pattern 300. In this case,the external connection terminals 500 may be disposed on a bottomsurface of the lower redistribution layer 700. The external connectionterminals 500 may have a different pitch or arrangement from that of theconductive structures 250′.

FIGS. 9A to 9C illustrate cross-sectional views corresponding to lineI-II of FIG. 1A, showing a method of fabricating an interconnect packageaccording to exemplary embodiments. A description duplicate with theaforementioned will be omitted hereinafter. In describing FIGS. 9A to9C, FIG. 9C is chosen to define a top surface, an upper portion, abottom surface, and a lower portion.

Referring to FIGS. 1A and 9A, the insulation patterns 410 and theredistribution patterns 415 may be formed on the third carrier substrate930, which may form the preliminary redistribution layer 401. Theconductive pads 416 may be formed on the preliminary redistributionlayer 401. The preliminary redistribution layer 401 may be formed byperforming processes substantially the same as those discussed abovewith reference to FIG. 5A. The conductive pads 416 may be formed on thepreliminary redistribution layer 401, thereby coupling to theredistribution patterns 415.

Referring to FIGS. 1A and 9B, the semiconductor chip 100, the conductivestructures 250′, the molding pattern 300, and the external connectionterminals 500 may be formed on the preliminary redistribution layer 401.The semiconductor chip 100 may be placed on the preliminaryredistribution layer 401 in such a way that the surface 100 a of thesemiconductor chip 100 may face the preliminary redistribution layer401. When viewed in a plan view, the semiconductor chip 100 may bedisposed on a central region of the preliminary redistribution layer401. First conductive interposers 461 may be formed between thesemiconductor chip 100 and the preliminary redistribution layer 401,thereby coupling to chip pads 105 of the semiconductor chip 100 and alsoto the conductive pads 416.

Metal pillars may be disposed on the preliminary redistribution layer401, which step may form conductive structures 250′. Second conductiveinterposers 462 may be formed between the conductive structures 250′ andthe preliminary redistribution layer 401, thereby coupled to theconductive structures 250′ and the conductive pads 416.

The molding pattern 300 may be formed on the preliminary redistributionlayer 401, covering the semiconductor chip 100. The molding pattern 300may cover side surfaces of the conductive structures 250′ and exposebottom surfaces 250 b of the conductive structures 250′. The externalconnection terminals 500 may be formed on the exposed conductivestructures 250′, thereby coupled to the conductive structures 250′.

Referring to FIGS. 1A and 9C, the semiconductor chip 100, the moldingpattern 300, and the preliminary redistribution layer 401 may be turnedupside down in such a way that the surface 100 a of the semiconductorchip 100 may face upward. The third carrier substrate 930 may be removedto expose the preliminary redistribution layer 401. First redistributionpads 451, second redistribution pads 452, and third redistribution pads453 may be formed on the exposed preliminary redistribution layer 401,which step may fabricate a redistribution layer 400. The formation andarrangement of the redistribution pads 451, 452, and 453 may besubstantially the same as those discussed above. An interconnect package1005 may therefore be eventually fabricated.

Alternatively, the lower redistribution layer 700 of FIG. 6 may furtherbe formed on a bottom surface of the molding pattern 300. In this case,the external connection terminals 500 may be disposed on a bottomsurface of the lower redistribution layer 700.

Referring back to FIGS. 3A and 3B, the semiconductor package PKG mayinclude the interconnect package 1000, the first semiconductor device2000, the second semiconductor device 3000, the third semiconductordevice 4000, and the molding layer 5000. The interconnect package 1000may be fabricated as discussed above with reference to FIGS. 2A to 2F.Differently from that shown, the interconnect package 1001 fabricated asdiscussed in FIGS. 5A to 5C, the interconnect package 1002 of FIG. 6 ,the interconnect package 1003 of FIGS. 7A and 7B, the interconnectpackage 1004 fabricated as discussed in FIGS. 8A to 8D, or theinterconnect package 1005 of FIGS. 9A to 9C may be used to mount thefirst to third semiconductor devices 2000, 3000, and 4000 on one of theinterconnect packages 1001, 1002, 1003, 1004, and 1005. Thesemiconductor package PKG may thus be fabricated.

According to embodiments, a semiconductor package having enhancedreliability and durability and a method of fabricating the same may beprovided. That is, an interconnect package may include a redistributionlayer, a semiconductor chip, a conductive structure, and a moldingpattern. The interconnect package may have good compatibility. Althoughsemiconductor devices are different in size, function, pitch ofconnection pads, and storage capacity, the interconnect package may becoupled to the semiconductor devices. The interconnect package mayinclude the redistribution layer, and the semiconductor devices may bemounted without being limited by width and length of the semiconductorchip. It may be possible to more freely design an electrical path of thesemiconductor devices.

The interconnect package may be used to standardize and systematize anelectrical connection between the semiconductor devices and thesemiconductor chip. A semiconductor package may become compact-sized.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A method of fabricating a semiconductor package,the method comprising: providing a semiconductor chip; forming aredistribution substrate having a first surface and a second surfaceopposite to each other, the redistribution substrate including aplurality of first pads and a plurality of second pads on the firstsurface thereof; and fabricating a package including a plurality ofconductive structures, the redistribution substrate, the semiconductorchip, and a plurality of external connection terminals, wherein thesemiconductor chip and the plurality of conductive structures aredisposed on the second surface of the redistribution substrate, theplurality of conductive structures spaced apart from the semiconductorchip, wherein the plurality of external connection terminals areprovided on the plurality of conductive structures and electricallyconnected to the plurality of conductive structures, the plurality ofexternal connection terminals having a non-overlapping relationship withrespect to the semiconductor chip, in a top view, wherein theredistribution substrate has a first region and a second region spacedapart from each other in a plan view, wherein the plurality of firstpads are provided on the first region of the redistribution substrate,wherein the plurality of second pads are provided on the second regionof the redistribution substrate, the plurality of second pads and theplurality of first pads being electrically connected to thesemiconductor chip, and the plurality of second pads having a secondpitch different from a first pitch of the plurality of first pads, andwherein the first pitch is smaller than a pitch of the plurality ofexternal connection terminals.
 2. The method as claimed in claim 1,wherein the plurality of first pads are vertically overlapped with theplurality of conductive structures and are not vertically overlappedwith the semiconductor chip.
 3. The method as claimed in claim 1,wherein the second pitch is smaller than the pitch of the plurality ofexternal connection terminals.
 4. The method as claimed in claim 1,further comprising: mounting a first semiconductor device on the firstsurface of the redistribution substrate, such that the firstsemiconductor device is coupled to the plurality of first pads, andmounting a second semiconductor device on the first surface of theredistribution substrate, such that the second semiconductor device iscoupled to the plurality of second pads.
 5. The method as claimed inclaim 1, wherein forming the redistribution substrate includes: formingan insulation pattern on a carrier substrate; forming redistributionpatterns on the insulation pattern; and forming the plurality of firstpads and the plurality of second pads coupled to the redistributionpatterns.
 6. The method as claimed in claim 1, further comprising:forming a molding pattern on the second surface of the redistributionsubstrate to cover the semiconductor chip and sidewalls of the pluralityof conductive structures; and forming a lower redistribution layer on alower surface of the molding pattern and bottom surfaces of theplurality of conductive structures, wherein the plurality of externalconnection terminals are disposed on a lower surface of the lowerredistribution layer, and are electrically connected to the plurality ofconductive structures through the lower redistribution layer.
 7. Themethod as claimed in claim 1, wherein forming the redistributionsubstrate further includes forming third pads on the first surfacethereof, wherein the third pads are provided on a third region of theredistribution substrate, the third region being spaced apart from thefirst region and the second region in a plan view, wherein the thirdpads have a third pitch different from the first pitch and the secondpitch, and wherein the third pitch is smaller than the pitch of theplurality of external connection terminals.
 8. A method of fabricating asemiconductor package, the method comprising: providing a preliminarypackage including a first semiconductor chip, a plurality of conductivestructures, and a molding pattern, such that a plurality of chip pads ofthe first semiconductor chip are exposed on a first surface of thepreliminary package, and the plurality of conductive structures isspaced apart from the first semiconductor chip; forming a firstredistribution layer on the first surface of the preliminary package;and forming a plurality of external connection terminals on a secondsurface of the preliminary package, the second surface being opposite tothe first surface, and the plurality of external connection terminalsbeing coupled to the plurality of conductive structures, wherein thefirst redistribution layer includes a redistribution pattern and aplurality of first redistribution pads coupled to the redistributionpattern, the redistribution pattern being coupled to the plurality ofchip pads, and wherein the plurality of first redistribution pads have apitch smaller than a pitch of the plurality of external connectionterminals.
 9. The method as claimed in claim 8, wherein the firstredistribution layer further includes a plurality of secondredistribution pads, the plurality of second redistribution pads have apitch different from the pitch of the plurality of first redistributionpads.
 10. The method as claimed in claim 8, wherein the firstsemiconductor chip includes a field-programmable gate array (FPGA). 11.The method as claimed in claim 8, further comprising mounting a firstsemiconductor device on the first redistribution layer, such that thefirst semiconductor device is coupled to the plurality of firstredistribution pads.
 12. The method as claimed in claim 11, wherein thefirst semiconductor device includes a package substrate, a secondsemiconductor chip on the package substrate, and a molding membercovering the second semiconductor chip.
 13. The method as claimed inclaim 8, wherein forming the preliminary package includes: providing acarrier substrate; placing the first semiconductor chip on the carriersubstrate; placing a wiring substrate with the plurality of conductivestructures on the carrier substrate; and removing the carrier substrateto expose the plurality of chip pads of the first semiconductor chip anda surface of the wiring substrate.
 14. The method as claimed in claim13, wherein the wiring substrate includes a hole penetrating the wiringsubstrate, the first semiconductor chip being inside the hole of thewiring substrate.
 15. The method as claimed in claim 8, furthercomprising forming a second redistribution layer on the second surfaceof the preliminary package, such that the second redistribution layercovers the molding pattern, wherein the second redistribution layer iscoupled to the plurality of conductive structures, and wherein theplurality of external connection terminals are formed on the secondredistribution layer and are coupled to the second redistribution layerand to the plurality of conductive structures.
 16. A method offabricating a semiconductor package, the method comprising: forming aredistribution layer by forming an insulation pattern on a carriersubstrate and forming a redistribution pattern on the insulationpattern; forming a plurality of first redistribution pads and aplurality of second redistribution pads on a first surface of theredistribution layer, the plurality of first redistribution pads havinga smaller pitch than a pitch of the plurality of second redistributionpads; coupling the plurality of first redistribution pads to theredistribution pattern of the redistribution layer; mounting asemiconductor chip on a second surface of the redistribution layer andelectrically connecting the semiconductor chip to the redistributionlayer; forming a plurality of conductive structures on the secondsurface of the redistribution layer and electrically connecting theplurality of conductive structures to the redistribution layer; andforming a plurality of external connection terminals on the plurality ofconductive structures, such that the plurality of external connectionterminals has a pitch greater than a pitch of the plurality of firstredistribution pads, wherein the plurality of first redistribution padsare vertically overlapped with the plurality of conductive structuresand are not vertically overlapped with the semiconductor chip.
 17. Themethod as claimed in claim 16, further comprising placing a firstsemiconductor device on the first surface of the redistribution layer,the first semiconductor device being coupled to the plurality of firstredistribution pads.
 18. The method as claimed in claim 16, wherein theplurality of second redistribution pads have an arrangement differentfrom an arrangement of the plurality of first redistribution pads.